 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ON Semiconductor ) SWITCHMODETM NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL146/BUL146F have an applications specific state-of-the-art die designed for use in fluorescent electric lamp ballasts to 130 Watts and in Switchmode Power supplies for all types of electronic equipment. These high voltage/high speed transistors offer the following: BUL146 BUL146F POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS * Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain Fast Switching No Coil Required in Base Circuit for Turn-Off (No Current Tail) Full Characterization at 125C Two Packages Choices: Standard TO220 or Isolated TO220 Parametric Distributions are Tight and Consistent Lot-to-Lot BUL146F, Case 221D, is UL Recognized to 3500 VRMS: File # E69369 * * * * 4 1 2 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR 3 BUL146 CASE 221A-09 TO-220AB MAXIMUM RATINGS Rating Collector-Emitter Sustaining Voltage Collector-Emitter Breakdown Voltage Emitter-Base Voltage Collector Current - Continuous - Peak(1) Base Current - Continuous - Peak(1) RMS Isolation Voltage: (2) (for 1 sec, R.H. 30%, TC = 25 C) Total Device Dissipation Derate above 25C Symbol VCEO VCES VEBO IC ICM IB IBM VISOL1 VISOL2 VISOL3 PD TJ, T stg BUL146 400 700 9.0 6.0 15 4.0 8.0 - - - 100 0.8 4500 3500 1500 40 0.32 BUL146F Unit Vdc Vdc Vdc Adc Adc Volts 1 2 3 (TC = 25C) Watts W/C C STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER Operating and Storage Temperature - 65 to 150 THERMAL CHARACTERISTICS Rating Thermal Resistance - Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds CASE 221D-02 ISOLATED TO-220 TYPE BUL146F Symbol RJC RJA TL BUL146 1.25 62.5 260 BUL146F 3.125 62.5 Unit C/W C (c) Semiconductor Components Industries, LLC, 2002 1 April, 2002 - Rev. 6 Publication Order Number: BUL146/D BUL146 BUL146F ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125C) Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. VCEO(sus) ICEO ICES 400 - - - - - - - - - - - - 100 100 500 100 100 Vdc Adc Adc Symbol Min Typ Max Unit IEBO Adc ELECTRICAL CHARACTERISTICS - (TC = 25C unless otherwise noted) Characteristic ON CHARACTERISTICS Base-Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) Base-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) Collector-Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc) (TC = 125C) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc) (TC = 125C) DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc) DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc) DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 8.0 V) Dynamic Saturation Volty a c Sa u a o o age: Determined 1.0 s and 3.0 3 0 s respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 1.3 Adc IB = 300 mAdc B1 VCC = 300 V) (IC = 3.0 Adc IB = 0.6 Adc B1 0 6 VCC = 300 V) 1.0 s 3.0 s 1.0 s 3.0 s (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) fT COB CIB - - - - - - - VCE(dsat) - - - - 14 95 1000 2.5 6.5 0.6 2.5 3.0 7.0 0.75 1.4 - 150 1500 - - - - - - - - V MHz pF pF (TC = 125C) (TC = 125C) (TC = 125C) VBE(sat) VCE(sat) - - - - - - 14 - 12 12 8.0 7.0 10 0.82 0.93 0.22 0.20 0.30 0.30 - 30 20 20 13 12 20 1.1 1.25 0.5 0.5 0.7 0.7 34 - - - - - - Vdc Vdc Symbol Min Typ Max Unit hFE - http://onsemi.com 2 BUL146 BUL146F SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 s) Turn-On Time Turn-Off Time (TC = 125C) Turn-On Time Turn-Off Time (TC = 125C) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) Fall Time Storage Time (TC = 125C) Crossover Time (TC = 125C) Fall Time Storage Time (TC = 125C) Crossover Time (TC = 125C) Fall Time Storage Time (TC = 125C) Crossover Time (TC = 125C) tc (IC = 3.0 Adc, IB1 = 0.6 Adc IB2 = 0.6 Adc) tfi (TC = 125C) tsi tc (IC = 3.0 Adc, IB1 = 0.6 Adc IB2 = 1.5 Adc) tfi (TC = 125C) tsi tc (IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc) tfi (TC = 125C) tsi - - - - - - - - - - - - 80 - 2.6 - - - 115 120 1.35 1.75 200 210 85 100 1.75 2.25 175 200 - 210 - 4.5 230 400 200 - 2.5 - 350 - 150 - 2.5 - 300 - 180 - 3.8 - 350 - ns s ns ns s ns ns s ns (IC = 3.0 Adc, IB1 = 0.6 Adc IB1 = 1.5 Adc, VCC = 300 V) ton (TC = 125C) toff (IC = 1.3 Adc, IB1 = 0.13 Adc IB2 = 0.65 Adc, VCC = 300 V) ton (TC = 125C) toff - - - - - - - - 100 90 1.35 1.90 90 100 1.7 2.1 200 - 2.5 - 150 - 2.5 - ns s ns s http://onsemi.com 3 BUL146 BUL146F TYPICAL STATIC CHARACTERISTICS 100 TJ = 125C h FE , DC CURRENT GAIN TJ = 25C 10 TJ = - 20C VCE = 1 V h FE , DC CURRENT GAIN 100 TJ = 125C TJ = 25C 10 TJ = - 20C VCE = 5 V 1 0.01 0.1 1 10 1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt 2 TJ = 25C V CE , VOLTAGE (V) 10 Figure 2. DC Current Gain @ 5 Volts V CE , VOLTAGE (V) 1 1 IC = 1 A 2A 3A 5A 6A 0.1 IC/IB = 10 IC/IB = 5 TJ = 25C TJ = 125C 0.1 1 10 0 0.01 0.1 1 10 0.01 0.01 IB, BASE CURRENT (mA) IC COLLECTOR CURRENT (AMPS) Figure 3. Collector Saturation Region Figure 4. Collector-Emitter Saturation Voltage 1.2 1.1 1 V BE , VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 TJ = 125C 0.1 1 IC/IB = 5 IC/IB = 10 10 IC, COLLECTOR CURRENT (AMPS) TJ = 25C 10000 Cib 1000 C, CAPACITANCE (pF) TJ = 25C f = 1 MHz 100 Cob 10 0.4 0.01 1 1 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Base-Emitter Saturation Region Figure 6. Capacitance http://onsemi.com 4 BUL146 BUL146F TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 1000 800 t, TIME (ns) 600 400 200 0 IC/IB = 5 IC/IB = 10 IB(off) = IC/2 VCC = 300 V PW = 20 s t, TIME (ns) TJ = 125C 4000 3500 3000 2500 2000 1500 1000 TJ = 25C 0 2 4 6 8 500 0 0 2 4 6 8 IC/IB = 5 IC/IB = 10 TJ = 25C TJ = 125C IB(off) = IC/2 VCC = 300 V PW = 20 s IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 7. Resistive Switching, ton 2500 2000 1500 1000 500 0 IC/IB = 5 4000 3500 t si , STORAGE TIME (ns) 3000 2500 2000 1500 1000 500 7 8 0 3 Figure 8. Resistive Switching, toff IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H TJ = 25C TJ = 125C IC = 3 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H t, TIME (ns) TJ = 25C TJ = 125C 0 1 IC/IB = 10 IC = 1.3 A 4 5 hFE, FORCED GAIN 6 7 3 4 6 2 5 IC COLLECTOR CURRENT (AMPS) Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time, tsi(hFE) 250 tc 200 150 100 50 0 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 0 1 2 3 4 5 6 IC, COLLECTOR CURRENT (AMPS) tfi 250 200 t, TIME (ns) tc tfi IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H t, TIME (ns) 150 100 TJ = 25C TJ = 125C 7 8 TJ = 25C TJ = 125C 0 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) 50 Figure 11. Inductive Switching, tc and tfi IC/IB = 5 http://onsemi.com 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 BUL146 BUL146F TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 130 TC , CROSS-OVER TIME (ns) 120 Tfi , FALL TIME (ns) 110 100 90 80 70 60 3 4 5 TJ = 25C TJ = 125C 6 7 8 9 10 11 12 13 14 15 hFE, FORCED GAIN IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H IC = 3 A IC = 1.3 A 200 250 IC = 1.3 A 150 IC = 3 A TJ = 25C TJ = 125C 3 4 5 6 7 8 100 50 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 9 10 11 12 13 14 15 hFE, FORCED GAIN Figure 13. Inductive Fall Time Figure 14. Inductive Cross-Over Time GUARANTEED SAFE OPERATING AREA INFORMATION 100 I C , COLLECTOR CURRENT (AMPS) 10 7 6 5 4 3 2 1 0 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0 0V VBE(off) -5V -1, 5 V 800 I C , COLLECTOR CURRENT (AMPS) DC (BUL146) 5 ms 1 ms 10 s 1 s TC 125C IC/IB 4 LC = 500 H 1 EXTENDED SOA 0.1 0.01 10 400 600 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base-to-emitter junction reverse-biased. The safe level is specified as a reverse- biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 1,0 POWER DERATING FACTOR 0,8 0,6 0,4 0,2 0,0 20 THERMAL DERATING SECOND BREAKDOWN DERATING 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C) Figure 17. Forward Bias Power Derating http://onsemi.com 6 BUL146 BUL146F 10 9 dyn 1 s dyn 3 s 8 7 6 5 90% IB 1 s IB 1 2 3 s 3 4 TIME 5 6 7 8 4 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 VCLAMP 10% VCLAMP IC tsi tc 90% IC tfi 5 4 3 2 VOLTS 1 0 -1 -2 -3 -4 -5 0 VCE 10% IC Figure 18. Dynamic Saturation Voltage Measurements +15 V 1 F 100 3W MTP8P10 Figure 19. Inductive Switching Measurements 150 3W 100 F VCE PEAK MTP8P10 RB1 Iout A VCE IB1 IB IB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 VOLTS IC(pk) = 100 mA IC PEAK MPF930 +10 V MPF930 MUR105 50 COMMON 500 F 150 3W MJE210 MTP12N10 RB2 1 F -Voff INDUCTIVE SWITCHING L = 200 H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit TYPICAL THERMAL RESPONSE 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.1 1 t, TIME (ms) t2 DUTY CYCLE, D = t1/t2 10 t1 P(pk) 0.1 RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 1000 Figure 20. Typical Thermal Response (ZJC(t)) for BUL146 http://onsemi.com 7 BUL146 BUL146F TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.00 D = 0.5 0.2 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.10 1.00 P(pk) t2 DUTY CYCLE, D = t1/t2 10.00 t, TIME (ms) t1 RJC(t) = r(t) RJC RJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100.00 1000 Figure 21. Typical Thermal Response for BUL146F http://onsemi.com 8 BUL146 BUL146F TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS 0.107 MIN 0.107 MIN HEATSINK 0.110 MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 HEATSINK HEATSINK Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 *Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4-40 SCREW PLAIN WASHER CLIP HEATSINK COMPRESSION WASHER NUT HEATSINK Figure 23a. Screw-Mounted Figure 23b. Clip-Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 9 BUL146 BUL146F PACKAGE DIMENSIONS TO-220AB CASE 221A-09 ISSUE AA -T- B 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 F T S C Q 123 A U K H Z L V G D N R J STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 10 BUL146 BUL146F PACKAGE DIMENSIONS CASE 221D-02 (ISOLATED TO-220 TYPE) UL RECOGNIZED: FILE #E69369 ISSUE D -T- F Q A 123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 -B- C S U H K -Y- G N L D 3 PL M J R 0.25 (0.010) B M Y STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER http://onsemi.com 11 BUL146 BUL146F SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 BUL146/D |
Price & Availability of BUL146-D
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |